Concept:

There is a pressing need to ensure the seamless operation of reliable power converters, prompting a concerted effort to explore new converter topologies, innovative control techniques, and advanced semiconductor materials like wide bandgap and ultra-wide bandgap technologies. To this end, FLAGCHIP will validate WBG and UWBG semiconductor technologies and their integration into more compact and cost-effective power modules, combining these developments with upgraded C&HM of power electronic components. To this end, the project activities will progress on the state of the art on:

• Power Modules, including innovations at device and package level;

• Condition and Health Monitoring;

• Cost Efficiency of the proposed solution and the system as a whole.

FLAGCHIP’s approaches will be demonstrated through AC/DC and DC/DC applications at two strategically chosen pilot sites in France (DC/DC MVDC Converter – SUPERGRID) and Norway (AC/DC Offshore Wind Turbine and Substation Converter architecture – SINTEF). Therefore, these sites have been carefully selected to be complementary and represent the most relevant applications for PE, i.e. wind energy applications (including their generators and HVDC converter station) and MVDC converter-based applications (linked to solar energy generation, electric vehicle charging or hybrid microgrids among other purposes).

Objectives:

FLAGCHIP will make significant improvements in WBG and UWBG semiconductor technologies and leverage the advances to address critical challenges related to Condition and Health Monitoring of power electronic components, with the focus on RES generation and DC grids applications. To this end, the project overarching goal will be to develop technologies that will predict failures, facilitate predictive maintenance strategies, and provide more efficient, compact, and cost-effective solutions for power electronics.

The specific goals are:

• To advance the state-of-the-art in temperature measurement and degradation estimation for WBG semiconductors, specifically targeting SiC MOSFET devices, ensuring a robust understanding of the devices’ operational conditions and health status;

• To enhance the resilience and operational efficiency of power electronic systems through innovative C&HM methodologies based on the combination of data-driven and physics-of-failure approaches;

• To revolutionize current semiconductor technologies delving into innovative wide band gap and ultra-wide band gap power electronics;

• To develop the next-generation wide band gap power modules with increased performance, compact packaging and sensor integration;

• To carry out a complete validation and demonstration program of the project solutions up to TRL 5-6 in two different pilot sites;

• To achieve cost-effective integration, investigate into different costs models and carry out techno-economic models for the design of business models and service agreements for C&HM and maintenance;

• To ensure the exploitation of the project results by developing the corresponding business plans as well as their dissemination by reaching key stakeholders and promoting synergies with other R&D projects.